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| NTF2955 Power MOSFET -60 V, -2.6 A, Single P-Channel SOT-223 Features * TMOS7 Design for low RDS(on) * Withstands High Energy in Avalanche and Commutation Modes Applications http://onsemi.com V(BR)DSS -60 V RDS(on) TYP 145 mW @ -10 V P-Channel D ID MAX -2.6 A * * * * Power Supplies PWM Motor Control Converters Power Management Parameter Symbol VDSS VGS Steady State TA = 25C TA = 85C ID Value -60 20 -2.6 -2.0 Unit V V A MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) G S 4 Power Dissipation (Note 1) Steady State TA = 25C PD 2.3 W 1 2 3 SOT-223 CASE 318E STYLE 3 MARKING DIAGRAM 2955 LWW = Device Code = Location Code = Work Week Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25C TA = 85C TA = 25C ID -1.7 -1.3 A 2955 L WW PD IDM TJ, TSTG EAS 1.0 -10.4 -55 to 175 225 W A C mJ tp = 10 ms PIN ASSIGNMENT 4 Drain Operating Junction and Storage Temperature Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 V, VG = 10 V, IPK = 6.7 A, L = 10 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TL 260 C 1 2 3 Gate Drain Source THERMAL RESISTANCE RATINGS Parameter Junction-to-Tab (Drain) - Steady State (Note 2) Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RqJC RqJA RqJA Max 14 65 150 Unit C/W ORDERING INFORMATION Device NTF2955T1 NTF2955T3 Package SOT-223 SOT-223 Shipping 1000/Tape & Reel 4000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.127 in2 [1 oz] including traces) 2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu. area = 0.341 in2) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2004 1 August, 2004 - Rev. 1 Publication Order Number: NTF2955/D NTF2955 ELECTRICAL CHARACTERISTICS (TJ=25C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = -60 V 60 TJ = 25C TJ = 125C VGS = 0 V, ID = -250 mA -60 66.4 -1.0 -50 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = 20 V VGS(TH) RDS(on) () VGS = VDS, ID = -1.0 mA VGS = -10 V, ID = -0.75 A VGS = -10 V, ID = -1.5 A VGS = -10 V, ID = -2.4 A -2.0 145 150 154 1.77 -4.0 170 180 185 V m Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time gFS VGS = -15 V, ID = -0.75 A S CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 0 V, f = 1.0 MHz, VDS = 25 V 492 165 50 pF VGS = 10 V, VDS = 30 V, ID = 1 5 A 1.5 14.3 1.2 2.3 5.2 nC td(ON) tr td(OFF) tf VGS = 10 V, VDD = 25 V, ID = 1 5 A, RG = 9 1 1.5 A 9.1 RL = 25 11 7.6 65 38 ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 1 5 A 1.5 TJ = 25C TJ = 125C -1.10 -0.9 36 VGS = 0 V, dIS/dt = 100 A/ms, IS = 1.5 A 20 16 0.139 nC ns -1.30 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR 3. Pulse Test: pulse width 300ms, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTF2955 TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 10 -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) VGS = -6 V 8 VGS = -10 V to -7 V TJ = 25 C VGS = -5.5 V 6 VGS = -5 V 4 VGS = -4.5 V 2 VGS = -3.8 V 0 0 1 2 3 4 5 6 7 8 9 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 2 4 6 8 10 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 VDS 10 V TJ = -55C TJ = 25C TJ = 125C 8 6 4 2 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE () Figure 2. Transfer Characteristics 0.4 VGS = -10 V 0.25 TJ = 25C 0.225 0.2 0.3 TJ = 125C 0.2 TJ = 25C 0.1 TJ = -55C 0.175 0.15 VGS = -10 V VGS = -15 V 0.125 0.1 0.075 0.05 0 2 4 6 8 10 0 0 2 4 6 8 10 -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance versus Drain Current and Temperature Figure 4. On-Resistance versus Drain Current and Gate Voltage 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -IDSS, LEAKAGE (nA) ID = -1.5 A VGS = -10 V 1000 VGS = 0 V TJ = 150C 100 TJ = 125C 10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) 5 10 15 20 25 30 35 40 45 50 55 60 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTF2955 TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1200 1000 C, CAPACITANCE (pF) 800 Crss 600 Ciss 400 200 0 10 Coss Crss 5 -VGS 0 -VDS 5 10 15 20 25 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS = 0 V Ciss VGS = 0 V TJ = 25C 12 QT 60 50 VGS 40 30 20 VDS 2 0 0 2 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) 14 ID = -1.5 A TJ = 25C 10 0 16 10 8 QGS 6 4 QGD GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 -IS, SOURCE CURRENT (AMPS) VDD = -25 V ID = -1.5 A VGS = -10 V t, TIME (ns) 100 td(off) tf 10 td(on) tr Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 5 VGS = 0 V TJ = 25C 4 3 2 1 1 1 10 RG, GATE RESISTANCE () 100 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 100 -ID, DRAIN CURRENT (AMPS) 250 Figure 10. Diode Forward Voltage versus Current VGS = -20 V SINGLE PULSE TC = 25C IPK = -6.7 A 200 10 s 100 s 1 ms 10 150 1 dc 0.1 10 ms 100 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 100 50 0.01 0.1 0 25 50 75 100 125 150 175 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTF2955 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 4 S 1 2 3 B D L G J C 0.08 (0003) H M K SOLDERING FOOTPRINT 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 http://onsemi.com 5 NTF2955 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTF2955/D |
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